Enrique Dans' article explores China's recent announcement of a non-silicon based transistor development, highlighting its potential as both a technological breakthrough and a geopolitical play.

The research from Peking University claims improved performance over advanced silicon chips, utilizing new materials and a 3D architecture.

While acknowledging this as a significant development driven by strategic needs and U.S. restrictions, the piece also stresses that it remains a laboratory experiment, with industrial scaling and cost-effectiveness yet to be proven.

Commentary on the article offers various perspectives, including skepticism about the technology's immediate impact and its broader implications for global innovation and the semiconductor industry.

This article is also available in English on my Medium page, «China’s silicon-free transistor: a turning point or geopolitical game-playing?»