In this enlightening episode, Dr. Ren and Dr. Chen join us to delve into the fascinating properties of Boron Arsenide, a semiconductor noted for its high thermal conductivity and promisingly high ambipolar mobility. This dual mobility of electrons and holes has been confirmed through different measurement methodologies used by Yue et al. and Shin et al., thereby reinforcing the theoretical calculations.

Dr. Ren and Dr. Chen will discuss how Shin et al. successfully measured the high thermal and electrical transport properties concurrently at the same sample location, a noteworthy accomplishment. Yue et al. have made intriguing findings as well, revealing even higher ambipolar mobility than theoretical estimates in some instances.

The combination of high thermal conductivity and high ambipolar mobility makes Boron Arsenide an exciting prospect for various semiconductor applications. The episode will highlight the significance of reducing ionized and neutral impurity concentrations for realizing high mobility and high thermal conductivity, respectively.

Join us as we discuss the immense potential of cubic Boron Arsenide (c-BAs) in paving the way for the next generation of electronics.

Keywords: Dr. Ren, Dr. Chen, Boron Arsenide, Semiconductors, High Thermal Conductivity, High Ambipolar Mobility, Yue et al., Shin et al., c-BAs, Electronics, Next-Generation Electronics, Electron Mobility, Hole Mobility, Impurity Concentrations.

DOI: 10.1126/science.abn4290