Power-switching transistors built with gallium nitride (GaN) are superior to those built with silicon (Si). Odyssey Semiconductor has developed a method to achieve area-selective doped regions in GaN, opening the door to the realization of vertical-conduction devices. In this podcast with Mark Davidson, CEO of Odyssey Semiconductor, we will analyze the structure of GaN for high voltages.

Power-switching transistors built with gallium nitride (GaN) are superior to those built with silicon (Si). Odyssey Semiconductor has developed a method to achieve area-selective doped regions in GaN, opening the door to the realization of vertical-conduction devices. In this podcast with Mark Davidson, CEO of Odyssey Semiconductor, we will analyze the structure of GaN for high voltages.

Power-switching transistors built with gallium nitride (GaN) are superior to those built with silicon (Si). Odyssey Semiconductor has developed a method to achieve area-selective doped regions in GaN, opening the door to the realization of vertical-conduction devices. In this podcast with Mark Davidson, CEO of Odyssey Semiconductor, we will analyze the structure of GaN for high voltages.

GaN Devices Design for High Voltages

The power electronics market has become a hotbed of innovation. Power ICs based on gallium nitride and silicon carbide are enabling new frontiers in electronic system performance in industrial automation, renewable energy, smart grids, the Internet of things, and other markets. PowerUP podcasts will connect with the world’s leading power electronics experts to explain how the technology is evolving, and what those changes means for every aspect of the industry.

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GaN Devices Design for High Voltages

GaN Devices Design for High Voltages