This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

Lecture 3B: The Ballistic MOSFET

Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

Share Lecture 3B: The Ballistic MOSFET

Sign up to save your podcasts

Lecture 3B: The Ballistic MOSFET

Lecture 3B: The Ballistic MOSFET