While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.

Lecture 7: Connection to the Bottom Up Approach

Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

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Lecture 7: Connection to the Bottom Up Approach

Lecture 7: Connection to the Bottom Up Approach