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Share Silicio Multicristalino para Aplicaciones Fotovoltaicas Mechanical characterization of wafer equivalents from wire-sawing to thin film deposition
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Silicio Multicristalino para Aplicaciones Fotovoltaicas Mechanical characterization of wafer equivalents from wire-sawing to thin film deposition
TERESA ORELLANA Fraunhofer Institute for Solar Energy Systems (ISE) Freiburg, Alemania
The epitaxial wafer equivalent concept at Fraunhofer ISE promises product cost reduction by depositing 20 μm crystalline silicon thin film by CVD on a low cost silicon substrate [2].The substrate of the wafer equivalent should provide a good mechanical strength while the epitaxial layer is responsible for the electrical performance of the final solar cell (Epi-Cell).
At Fraunhofer ISE, multicrystalline silicon blocks between 20 kg and 250 kg are crystallized via directional solidification. The crystallization is done in a Vertical Gradient Freeze (VGF) furnace with graphite heaters.
Silicon is put into a fused silica crucible (SiO2), which is coated with a silicon nitride (Si3N4) liner to prevent a chemical reaction between crucible and silicon.
Multicrystalline high boron doped silicon and up-graded metallurgical silicon (UMG-Si) are crystallized for manufacturing the substrate of the epitaxial wafer equivalent, thus saving the costs for high purity silicon material. Using silicon as a substrate reduces problems arising from differences in thermal expansion coefficients and misfit of lattice parameters. The Epi-Cell can also benefit from manufacturing cost reduction if the wafer equivalent presents a sufficient mechanical strength to ensure subsequent high processing yield until the production of final solar cells.
Seminarios Internacionales de
Fronteras de la Ciencia de Materiales Aula de Seminarios Departamento de Ciencia de Materiales E. T. S. de Ingenieros de Caminos, UPM C/ Profesor Aranguren s.n. 28040 Madrid
Para más información contactar con: Dr. José Ygnacio Pastor (+34) 913 366 684. [email protected]
Vídeo Realizado por el Gabinete de Tele-Educación de la Universidad Politécnica de Madrid, grabado por el departamento ciencia de los materiales.
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TERESA ORELLANA Fraunhofer Institute for Solar Energy Systems (ISE) Freiburg, Alemania
The epitaxial wafer equivalent concept at Fraunhofer ISE promises product cost reduction by depositing 20 μm crystalline silicon thin film by CVD on a low cost silicon substrate [2].The substrate of the wafer equivalent should provide a good mechanical strength while the epitaxial layer is responsible for the electrical performance of the final solar cell (Epi-Cell).
At Fraunhofer ISE, multicrystalline silicon blocks between 20 kg and 250 kg are crystallized via directional solidification. The crystallization is done in a Vertical Gradient Freeze (VGF) furnace with graphite heaters.
Silicon is put into a fused silica crucible (SiO2), which is coated with a silicon nitride (Si3N4) liner to prevent a chemical reaction between crucible and silicon.
Multicrystalline high boron doped silicon and up-graded metallurgical silicon (UMG-Si) are crystallized for manufacturing the substrate of the epitaxial wafer equivalent, thus saving the costs for high purity silicon material. Using silicon as a substrate reduces problems arising from differences in thermal expansion coefficients and misfit of lattice parameters. The Epi-Cell can also benefit from manufacturing cost reduction if the wafer equivalent presents a sufficient mechanical strength to ensure subsequent high processing yield until the production of final solar cells.
Seminarios Internacionales de
Fronteras de la Ciencia de Materiales Aula de Seminarios Departamento de Ciencia de Materiales E. T. S. de Ingenieros de Caminos, UPM C/ Profesor Aranguren s.n. 28040 Madrid
Para más información contactar con: Dr. José Ygnacio Pastor (+34) 913 366 684. [email protected]
Vídeo Realizado por el Gabinete de Tele-Educación de la Universidad Politécnica de Madrid, grabado por el departamento ciencia de los materiales.