
Sign up to save your podcasts
Or


With the advance of wide-bandgap power semiconductors in the marketplace, many are starting to feel that the time is getting short for silicon-based power electronics. However, the fundamental structure of the silicon power MOSFET remained largely unchanged, and there is still a window of opportunity to develop next-generation devices that can leverage the maturity and expertise of the silicon processing industry.
One such company, iDEAL Semiconductor, has redefined the legacy structure with its SuperQ advanced REduced SURface Field (RESURF) Silicon Power MOSFET architecture.
By Endeavor Business MediaWith the advance of wide-bandgap power semiconductors in the marketplace, many are starting to feel that the time is getting short for silicon-based power electronics. However, the fundamental structure of the silicon power MOSFET remained largely unchanged, and there is still a window of opportunity to develop next-generation devices that can leverage the maturity and expertise of the silicon processing industry.
One such company, iDEAL Semiconductor, has redefined the legacy structure with its SuperQ advanced REduced SURface Field (RESURF) Silicon Power MOSFET architecture.