presented by Sattam F. Alshali, Cardiff University
Abstract: This paper investigates the concurrent operation of a commercially available, modulated impedance synthesis and measurement system with digital pre-distortion (DPD) for industry standard modulated signals. The system was used to characterize a 10W GaN HEMT device, and provide impedance control over signal and distortion bandwidths, in response to a 10 MHz LTE signal centred at 2 GHz, and was able to rapidly achieve target reflection coefficients with an error less than -40dB (1%). A National Instruments (NI) PXi based characterisation system was used to apply a commercially available memory-based DPD algorithm. The transistor was biased in class-AB and was successfully linearised to better than -47.95 dBc ACPR when delivering at 2.5W average output power into an optimum load. Interestingly, the analysis showed that the DPD corrected ACPR contours aligned closely with the P1dB contours, confirming the relevance of targeting peak-power for DPD, rather than raw ACPR. Also, and importantly, a level of linearity performance was achieved that meets for example, the 3GPP linearity specifications (45dBc) for commercial deployment, and demonstrates how this modulated load-pull system and DPD can be combined to de-risk an amplifier design at a very early stage in the design process.