Scientists at the Physics and Engineering Department of the UK’s Lancaster University published a new paper describing ULTRARAM. A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon.

I think this tech is a game changer but I still have my doubts. Let us discuss

0:00 Intro

0:30 RAM

4:00 SSD

11:00 UltraRAM

17:30 Doubts

* RAM (Dynamic RAM)

* Fast access with capacitors

* random access

* requires power to be refreshed

* Flash NAND (SSD)

* Pros fast random access (FTL)

* Block storage

* Requires high voltage (20V to erase/ 7.5 to program)

* Low durability endurance which then (write amplification + garbage collection )

* UltraRAM uses a new novel approach to the memory cell design that only need 2.5 V to program/erase, low power which saves the memory cell lifetime https://www.sciencedirect.com/topics/engineering/fowler-nordheim-tunnelling

* High endurance program/erase last longer

* High retention

* GC/WA not required

* Limitations: still we know very little

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202101103